SFTN60AR Datasheet | Winning Team

Features - High voltage power MOSFET - Fast switching capability Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current1) Power Dissipation TC = 25℃ Operating Junction and Storage Temperature Rang 1) Repetitive Rating : Pulse width limited by TJ. Symbol VDS VGS ID IDM PD TJ, Tstg Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Value 600 ± 30 2 8 44 - 55 to + 150 Max. 2.87 100 Unit V V A A W ℃ Unit ℃/W ℃/W Winning Team 互創國際 Dated: 08/05/2017 Characteristics at Tj = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 250 µA Gate-Source Threshold Voltage at VDS = VGS, ID = 250 u A Drain-Source Leakage Current at VGS = 600 V at VDS = 480 V, TC =...