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SFTN60AR
N-Channel Enhancement Mode MOSFET
Features • High voltage power MOSFET • Fast switching capability
Drain Gate
Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolute Maximum Ratings Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Peak Drain Current1)
Power Dissipation
TC = 25℃
Operating Junction and Storage Temperature Rang
1) Repetitive Rating : Pulse width limited by TJ.
Symbol VDS VGS ID IDM PD
TJ, Tstg
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient
Symbol RθJC RθJA
Value 600 ± 30
2 8 44 - 55 to + 150
Max. 2.