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SFTN60AR - N-Channel MOSFET

Features

  • High voltage power MOSFET.
  • Fast switching capability Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current1) Power Dissipation TC = 25℃ Operating Junction and Storage Temperature Rang 1) Repetitive Rating : Pulse width limited by TJ. Symbol VDS VGS ID IDM PD TJ, Tstg Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Cas.

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Datasheet Details

Part number SFTN60AR
Manufacturer Winning Team
File Size 256.95 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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SFTN60AR N-Channel Enhancement Mode MOSFET Features • High voltage power MOSFET • Fast switching capability Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current1) Power Dissipation TC = 25℃ Operating Junction and Storage Temperature Rang 1) Repetitive Rating : Pulse width limited by TJ. Symbol VDS VGS ID IDM PD TJ, Tstg Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Value 600 ± 30 2 8 44 - 55 to + 150 Max. 2.
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