SFTN60R Datasheet | Winning Team

N-Channel Enhancement Mode MOSFET 1.Gate 2.Drain 3.Source TO-252 Plastic Package Drain Gate Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current TC = 25℃ TC = 100℃ Power Dissipation TC = 25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS IDM PD TJ, Tstg Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Source Value Unit ± 30 1.9 1.2 - 55 to + 150 ℃ Max. 2.98 110 Unit ℃/W ℃/W Winning Team 互創國際 Dated: 16/03/2016 Rev: 01 Characteristics at Ta = 25℃ Parameter Drain-Source Breakdown Voltage at ID = 250 µA Drain-Source Leakage Current at VDS = 600 V Gate Leakage Current at VGS = ± 30 V Gate-Source Threshold Voltage at VDS = VGS, ID = 250 u A Drain-Source On-State Resistance at VGS = 10 V, ID = 0.95 A Forward Transconductance at VDS = 30 V, ID = 1 A Diode Forward Voltage at IS = 1.9 A, VGS= 0...