Click to expand full text
SFTN60R
N-Channel Enhancement Mode MOSFET
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Drain
Gate
Absolute Maximum Ratings Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Peak Drain Current
TC = 25℃ TC = 100℃
Power Dissipation
TC = 25℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM PD TJ, Tstg
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient
Symbol RθJC RθJA
Source
Value
Unit
600
V
± 30
V
1.9 1.2
A
7.6
A
42
W
- 55 to + 150
℃
Max. 2.
SFTN60R Datasheet
