SFTN6412MP Datasheet | Winning Team

N-Channel Enhancement Mode MOSFET Drain Gate Source 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain DFN3030 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Drain-Gate Voltage Drain Current - Continuous Power Dissipation Drain Current - Pulsed 1) Single Pulse Avalanche Energy 2) = TC TC = = 25℃ 100℃ TC = 25℃ TC = 25℃ Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case 1) Repetitive Rating : Pulsed width limited by maximum junction temperature. 2)Limited by Tjmax, VGS = 10 V, L= 0.5 m H, IAS = 22 A, RG = 25 Ω, Starting TJ = 25℃. Symbol VDS VGS PD IDM EAS Tj, Tstg Value 65 ± 20 30 19 32 60 121 - 55 to + 150 Symbol RθJA RθJC Max. 35 3.9 Unit V V A W A m J ℃ Unit ℃/W ℃/W Winning Team 互創國際 Dated: 23/01/2018 Rev:01 Characteristics at Tj = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 250 µA Gate-Source Threshold Voltage at VDS = VGS, ID = 250 µA Drain-Source Leakage Current at VDS = 65 V at VDS = 65 V ,TJ =...