WFP740 Datasheet PDF

Winsemi WFP740

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Part No.	WFP740
Datasheet	WFP740 Download
Manufacturer	Winsemi
Description	Silicon N-Channel MOSFET
Buy	Stock & Price

FEATURES

10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V Ultra-low Gate Charge(Typical 60nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) WFP740 Silicon N-Channel MOSFET

GENERAL DESCRIPTION

This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃)