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WFP740 - Silicon N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Features

  • 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 60nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFP740 Silicon N-Channel MOSFET General.

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Datasheet preview – WFP740

Datasheet Details

Part number WFP740
Manufacturer Winsemi
File Size 534.08 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP740 Datasheet
Additional preview pages of the WFP740 datasheet.

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Full PDF Text Transcription

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Features � 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V � Ultra-low Gate Charge(Typical 60nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFP740 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
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