WFP740 - Silicon N-Channel MOSFET

Winsemi

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Key Features

10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V.
Ultra-low Gate Charge(Typical 60nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) WFP740 Silicon N-Channel MOSFET General.

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WFP740 silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFP740
Manufacturer	Winsemi
File Size	534.08 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFP740 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features � 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V � Ultra-low Gate Charge(Typical 60nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFP740 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.