WFU5N50 - Silicon N-Channel MOSFET

Winsemi

General Description

Th is Power MO SFET is pro du ced usi ng Wins e mi ’s ad van ced plana r stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugge d avalanche chara ct er istics.

Key Features

5A,500V,RDS(on)(Max1.6Ω)@VGS=10V.
Ultra-low Gate Charge(Typical 32nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃ ) General.

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WFU5N50 silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFU5N50
Manufacturer	Winsemi
File Size	794.88 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFU5N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 0 WFU5N5 5N50 con N-Channel MOSFET Sili lic Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃ ) General Description Th is Power MO SFET is pro du ced usi ng Wins e mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugge d avalanche chara ct er istics. This devices is spe cially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.