WFU5N50 Description
Th is Power MO SFET is pro du ced usi ng Wins e mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugge d avalanche chara ct er istics. This devices is spe cially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp...
WFU5N50 Key Features
- 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 32nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃ )