WFU5N50 Datasheet | Winsemi

Datasheet pdf - http://..net/ .DataSheet.co.kr 0 WFU5N5 5N50 con N-Channel MOSFET Sili lic Features - 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V - Ultra-low Gate Charge(Typical 32nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃ ) General Description Th is Power MO SFET is pro du ced usi ng Wins e mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugge d avalanche chara ct er istics. This devices is spe cially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant...