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13N5 0 WFW FW13N5 13N50
con N-Ch annel MOS FET Sili lic Cha OSF
Features
■ 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
WFW13N50 Datasheet
