Datasheet Summary
Datasheet pdf
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13N5 0 WFW FW13N5 13N50 con N-Ch annel MOS FET Sili lic Cha OSF
Features
- 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
- Ultra-low Gate charge(Typical 43nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant...