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CMPA1D1E030D
30 W, 13.75 - 14.5 GHz, 40 V GaN MMIC, Power Amplifier
Description
Wolfspeed’s CMPA1D1E030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors.
PN: CMPA1D1E030D
Typical Performance Over 13.75-14.5 GHz (TC = 25ºC)
Parameter
13.75 GHz
14.
CMPA1D1E030D Datasheet
