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CMPA1D1E030D - Power Amplifier

General Description

Wolfspeed’s CMPA1D1E030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process.

Key Features

  • 27 dB Small Signal Gain.
  • 30 W Typical PSAT.
  • Operation up to 40 V.
  • High Breakdown Voltage.
  • High Temperature Operation.

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Full PDF Text Transcription (Reference)

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CMPA1D1E030D 30 W, 13.75 - 14.5 GHz, 40 V GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA1D1E030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors. PN: CMPA1D1E030D Typical Performance Over 13.75-14.5 GHz (TC = 25ºC) Parameter 13.75 GHz 14.