YAGEO XP10A035MT
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| Part No. | XP10A035MT |
|---|---|
| Datasheet | XP10A035MT Download |
| Manufacturer |  YAGEO |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
XP10A035 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. PMPAK ® 5x6 dual pad provide superior thermal performance and is design for surface mount applications. S1 G1 S2 G2 S1 G1 S2 G2 D1 D1 D2 D2 PMPAK® 5x6ABSOLUTE MAXIMUM RATINGS
@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage +20 V ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM Drain Current, VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 17.7 A 7.3 A 5.8 A 30 A PD@TA=25℃ Total Power Dissipation 3.57 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Rating 6 35 Units ℃/W ℃/W 1 202502032YAGEO XP10A035MTELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
