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XP10A035MT - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

XP10A035 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP10A035MT
Manufacturer YAGEO
File Size 667.08 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP10A035MT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free XP10A035MT Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 D2 D2 BVDSS RDS(ON) 100V 35mΩ Description XP10A035 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. PMPAK ® 5x6 dual pad provide superior thermal performance and is design for surface mount applications. S1 G1 S2 G2 S1 G1 S2 G2 D1 D1 D2 D2 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25oC.