• Part: XP10A035MT
  • Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 667.08 KB
Download XP10A035MT Datasheet PDF
YAGEO
XP10A035MT
XP10A035MT is DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description XP10A035 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. PMPAK ® 5x6 dual pad provide superior thermal performance and is design for surface mount applications. S1 G1 S2 G2 S1 G1 S2 G2 D1 D1 D2 D2 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM Drain Current, VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Rating 6 35 Units ℃/W...