Datasheet Details
| Part number | XP10A250MT |
|---|---|
| Manufacturer | YAGEO |
| File Size | 325.13 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP10A250MT-YAGEO.pdf |
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Overview: XP10A250MT Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS pliant & Halogen-Free D1 D1 D2 D2 BVDSS RDS(ON) 100V.
| Part number | XP10A250MT |
|---|---|
| Manufacturer | YAGEO |
| File Size | 325.13 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP10A250MT-YAGEO.pdf |
|
|
|
XP10A250 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device fo PMPAK ® 5x6 dual pad provide superior thermal performance and is design for surface mount applications.
S1 G1 S2 G2 D1 D1 D2 D2 S1 G1 S2 G2 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage +20 V ID@TC=25℃ ID@TA=25℃ Drain Current, VGS @ 10V Drain Current3, VGS @ 10V 4.7 A 2.5 A ID@TA=70℃ IDM Drain Current3, VGS @ 10V Pulsed Drain Current1 2 A 10 A PD@TA=25℃ Total Power Dissipation 3.57 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Rating 10 35 Units ℃/W ℃/W 1 202312041YAGEO XP10A250MT Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
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