• Part: XP10A250MT
  • Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 325.13 KB
Download XP10A250MT Datasheet PDF
YAGEO
XP10A250MT
XP10A250MT is DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description XP10A250 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device fo PMPAK ® 5x6 dual pad provide superior thermal performance and is design for surface mount applications. S1 G1 S2 G2 D1 D1 D2 D2 S1 G1 S2 G2 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 ID@TC=25℃ ID@TA=25℃ Drain Current, VGS @ 10V Drain Current3, VGS @ 10V ID@TA=70℃ IDM Drain Current3, VGS @ 10V Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter...