XP10A250MT
XP10A250MT is DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
XP10A250 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device fo PMPAK ® 5x6 dual pad provide superior thermal performance and is design for surface mount applications.
S1 G1 S2 G2
D1 D1 D2 D2
S1
G1 S2
G2
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
+20
ID@TC=25℃ ID@TA=25℃
Drain Current, VGS @ 10V Drain Current3, VGS @ 10V
ID@TA=70℃ IDM
Drain Current3, VGS @ 10V Pulsed Drain Current1
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter...