XP10A250YT
XP10A250YT is DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
G2
XP10A250 series are innovated design and silicon PMPAK® 3x3 process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device fo
The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
D1 D1 D2 D2 S1 G1 S2 G2
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
+20
ID@TA=25℃ ID@TA=70℃
Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V
Pulsed Drain Current1
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3
Rating 10...