• Part: XP10A250YT
  • Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 724.16 KB
Download XP10A250YT Datasheet PDF
YAGEO
XP10A250YT
XP10A250YT is DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description G2 XP10A250 series are innovated design and silicon PMPAK® 3x3 process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device fo The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. D1 D1 D2 D2 S1 G1 S2 G2 Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 ID@TA=25℃ ID@TA=70℃ Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Rating 10...