XP10A045YT - Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

General Description

resistance and fast switching performance.

wide range of power applications.

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XP10A045YT dual n-channel enhancement mode power mosfet by YAGEO - Datasheet Preview

Datasheet Details

Part number	XP10A045YT
Manufacturer	YAGEO
File Size	727.76 KB
Description	Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP10A045YT Datasheet

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XP10A045YT Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D1 BVDSS D2 RDS(ON) ID3 100V 45mΩ 5.4A S1 G1 S2 Description G2 XP10A045 series are innovated design and silicon PMPAK® 3x3 process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. D1 D1 D2 D2 S1 G1 S2 G2 Absolute Maximum Ratings@Tj=25oC.