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CSD16340Q3 - 25-V N-Channel Power MOSFET

General Description

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.

Key Features

  • 1 Optimized for 5 V Gate Drive.
  • Resistance Rated at VGS =2.5 V.
  • Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3-mm × 3.3-mm Plastic Package 2.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD16340Q3 SLPS247E – DECEMBER 2009 – REVISED AUGUST 2014 CSD16340Q3 25-V N-Channel NexFET™ Power MOSFET 1 Features •1 Optimized for 5 V Gate Drive • Resistance Rated at VGS =2.5 V • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems • Optimized for Control or Synchronous FET Applications 3 Description This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.