Datasheet Details
| Part number | CSD16342Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 2.18 MB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD16342Q5A-etcTI.pdf |
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Overview: CSD16342Q5A .ti. SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16342Q5A RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage.
| Part number | CSD16342Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 2.18 MB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD16342Q5A-etcTI.pdf |
|
|
|
The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.
Top View 20 18 16 14 12 10 8 6 4 2 0 0 S1 S2 S3 G4 8D 7D 6D D 5D P0095-01 RDS(ON) vs VGS ID = 20A TC = 25°C TC = 125ºC 12345678 VGS - Gate-to- Source Voltage - V 9 10 G001 PRODUCT SUMMARY VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 6.8 nC Qgd Gate Charge Gate to Drain 1.2 nC VGS = 2.5V 6.1 mΩ RDS(on) Drain to Source On Resistance VGS = 4.5V 4.3 mΩ VGS = 8V 3.8 mΩ Vth Threshold Voltage 0.85 V ORDERING INFORMATION Device Package Media Qty CSD16342Q5A SON 5 × 6 Plastic Package 13-inch reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, single pulse ID = 40A, L = 0.1mH, RG = 25Ω VALUE 25 +10 / –8 100 21 131 3 UNIT V V A A A W –55 to 150 °C 80 mJ (1) Typical RθJA = 40°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300μs, duty cycle ≤2% Gate Charge 10 9 ID =20A VDD = 12.5V 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Qg - Gate Charge - n
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