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CSD16322Q5 - N-Channel Power MOSFET

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

Key Features

  • Optimized for 5 V Gate Drive.
  • Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD16322Q5 SLPS219C – AUGUST 2009 – REVISED OCTOBER 2023 N-Channel NexFET™ Power MOSFET RDS(on) − On-State Resistance − mW VG − Gate Voltage − V 1 Features • Optimized for 5 V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems • Synchronous or Control FET Applications 3 Description The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.