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CSD16327Q3 - 25-V N-Channel Power MOSFET

General Description

This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

Key Features

  • 1 Optimized for 5-V Gate Drive.
  • Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Lead-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3-mm × 3.3-mm Plastic Package 2.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD16327Q3 SLPS371A – DECEMBER 2011 – REVISED SEPTEMBER 2016 CSD16327Q3 25-V N-Channel NexFET™ Power MOSFET 1 Features •1 Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems • Optimized for Control or Synchronous FET Applications Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 25 6.2 1.