CSD16325Q5 Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. NexFET is a trademark of Texas Instruments.
CSD16325Q5 Key Features
- 2 Optimized for 5V Gate Drive
- Ultralow Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS pliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
CSD16325Q5 Applications
- Point-of-Load Synchronous Buck in Networking, Tele and puting Systems
- Optimized for Synchronous FET Applications