Datasheet Details
| Part number | CSD16325Q5 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 257.28 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD16325Q5-etcTI.pdf |
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Overview: CSD16325Q5 .ti. SLPS218C – AUGUST 2009 – REVISED APRIL 2010 N-Channel NexFET™ Power MOSFETs Check for Samples:.
| Part number | CSD16325Q5 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 257.28 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD16325Q5-etcTI.pdf |
|
|
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The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 25 Gate Charge Total (4.5V) 18 Gate Charge Gate to Drain 3.5 Drain to Source On Resistance Threshold Voltage VGS = 3V VGS = 4.5V VGS = 8V 1.1 V nC nC 2.1 mΩ 1.7 mΩ 1.5 mΩ V ORDERING INFORMATION Device Package Media Qty CSD16325Q5 SON 5-mm × 6-mm Plastic Package 13-Inch Reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, single pulse ID = 100A, L = 0.1mH, RG = 25Ω VALUE 25 +10 / –8 100 33 200 3.1 UNIT V V A A A W –55 to 150 °C 500 mJ (1) Typical RqJA = 38°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
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