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CSD16325Q5 - N-Channel Power MOSFET

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

Key Features

  • 1.
  • 2 Optimized for 5V Gate Drive.
  • Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD16325Q5 www.ti.com SLPS218C – AUGUST 2009 – REVISED APRIL 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16325Q5 FEATURES 1 •2 Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems • Optimized for Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 25 Gate Charge Total (4.