Datasheet4U Logo Datasheet4U.com

CSD17322Q5A - N-Channel MOSFET

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.

Figure 1.

Key Features

  • 1.
  • 2 Optimized for 5V Gate Drive.
  • Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CSD10060 ZERO RECOVERY RECTIFIER ETC
CSD10060A ZERO RECOVERY RECTIFIER ETC
CSD10060B ZERO RECOVERY RECTIFIER ETC
CSD10060G ZERO RECOVERY RECTIFIER ETC
CSD10120 ZERO RECOVERY RECTIFIER ETC

Other Datasheets by Texas Instruments

Part Number Description
CSD17327Q5A N-Channel MOSFET
CSD17301Q5A N-Channel MOSFET
CSD17302Q5A N-Channel MOSFET
CSD17303Q5 N-Channel MOSFET
CSD17304Q3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CSD17322Q5A www.ti.com 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17322Q5A SLPS330 – JUNE 2011 FEATURES 1 •2 Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Notebook Point of Load • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. Figure 1. Top View S1 8D S2 7D S3 G4 D 6D 5D VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge Total (4.5V) 3.6 Gate Charge Gate to Drain 1.