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CSD19531KCS - 100V N-Channel Power MOSFET

General Description

This 100-V, 6.4-mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low-Thermal Resistance.
  • Avalanche Rated.
  • Lead-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • TO-220 Plastic Package 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD19531KCS SLPS407C – SEPTEMBER 2013 – REVISED MARCH 2017 CSD19531KCS 100-V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • TO-220 Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Hot Swap Telecom • Motor Control Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 37 7.5 VGS = 6 V VGS = 10 V 2.7 7.3 6.