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CSD19532Q5B - 100V N-Channel Power MOSFET

Datasheet Summary

Description

This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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Features

  • 1 Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage.

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Datasheet Details

Part number CSD19532Q5B
Manufacturer Texas Instruments
File Size 867.66 KB
Description 100V N-Channel Power MOSFET
Datasheet download datasheet CSD19532Q5B Datasheet
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Full PDF Text Transcription

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD19532Q5B SLPS414B – DECEMBER 2013 – REVISED MAY 2017 CSD19532Q5B 100 V N-Channel NexFET™ Power MOSFET 1 Features •1 Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 48 8.7 VGS = 6 V VGS = 10 V 2.6 4.
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