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CSD19531Q5A - 100V N-Channel Power MOSFET

General Description

This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5 mm × 6 mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19531Q5A SLPS406B – SEPTEMBER 2013 – REVISED MAY 2014 CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 37 6.6 VGS = 6 V VGS = 10 V 2.7 6.0 5.3 UNIT V nC nC mΩ mΩ V 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 100 V, 5.