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BAS116QA-Q - Low-leakage diode

General Description

Low-leakage current switching diode encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

2.

Key Features

  • High switching speed: trr = 0.8 µs.
  • Low leakage current: IR = 3 pA.
  • Repetitive peak reverse voltage VRRM ≤ 85 V.
  • Low capacitance Cd = 2 pF.
  • Ultra small SMD plastic package.
  • Low package height of 0.37 mm.
  • Suitable for Automatic Optical Inspection (AOI) of solder joint.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAS116QA-Q Low-leakage diode 7 March 2025 Product data sheet 1. General description Low-leakage current switching diode encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • High switching speed: trr = 0.8 µs • Low leakage current: IR = 3 pA • Repetitive peak reverse voltage VRRM ≤ 85 V • Low capacitance Cd = 2 pF • Ultra small SMD plastic package • Low package height of 0.37 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Low-leakage current applications • General-purpose switching 4. Quick reference data Table 1.