BAS16GW-Q
description
High-speed switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
- High switching speed: trr ≤ 4 ns
- Low leakage current
- Repetitive peak reverse voltage VRRM ≤ 100 V
- Low capacitance
- Small SMD plastic package
- High-temperature applications up to 175 °C
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- High-speed switching at high voltage
- General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VR reverse voltage
IR reverse current trr reverse recovery time
Conditions
Tj = 25 °C
VR = 80 V; pulsed; Tj = 25 °C
IF = 10 m A; IR = 10 m A; RL = 100 Ω; IR(meas) = 1 m A; Switched from IF = 10 m A to IR = 10 m A; Tj = 25 °C
Min Typ Max Unit
- -
100 V
- -
0.5 µA
- -
4 ns
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Cathode
Anode
Simplified...
