PMN28UNE Datasheet PDF - nexperia N-channel MOSFET Specs

PMN28UNE - N-channel MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology.
Low threshold voltage.
Very fast switching.
ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

Datasheet Details

Part number	PMN28UNE
Manufacturer	nexperia
File Size	278.32 KB
Description	N-channel MOSFET
Datasheet	PMN28UNE Datasheet
Additional preview pages of the PMN28UNE datasheet.

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Full PDF Text Transcription

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PMN28UNE 20 V, N-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 5.

Published: Jul 28, 2019 |