onsemi 2N3055
Complementary Silicon Power Transistors
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | 2N3055 |
|---|---|
| Datasheet | 2N3055 Download |
| Manufacturer |  onsemi |
| Description | Complementary Silicon Power Transistors |
| Buy | Stock & Price |
FEATURES
● DC Current Gain − hFE = 20 −70 @ IC = 4 Adc● Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
● Excellent Safe Operating Area
● Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25C Derate Above 25C VCEO VCER VCB VEB IC IB PD 60 70 100 7 15 7 115 0.657 Vdc Vdc Vdc Vdc Adc Adc W W/C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (C) Figure 1. Power Derating *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
