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PE29101 - High-speed FET Driver

Datasheet Summary

Description

enhancement mode gallium nitride (GaN) FETs.

Features

  • High- and low-side FET drivers.
  • Dead-time control.
  • Fast propagation delay, 11 ns.
  • Internal gate overvoltage management E.
  • Sub-nanosecond rise and fall time.
  • 2A/4A peak source/sink current.
  • Package.
  • flip chip.

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Datasheet preview – PE29101

Datasheet Details

Part number PE29101
Manufacturer pSemi
File Size 2.38 MB
Description High-speed FET Driver
Datasheet download datasheet PE29101 Datasheet
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Full PDF Text Transcription

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PE29101 Document Category: Product Specification UltraCMOS® High-speed FET Driver, 40 MHz Features • High- and low-side FET drivers • Dead-time control • Fast propagation delay, 11 ns • Internal gate overvoltage management E • Sub-nanosecond rise and fall time • 2A/4A peak source/sink current • Package – flip chip Applications IF • DC–DC conversions • AC–DC conversions • Wireless power L • LiDAR Figure 1 • PE29101 Functional Diagram VDD Sync Boot Switch IN EN RDHL RDLH UVLO Dead Time Controller Logic Level Shifter Level Shifter Output Driver Output Driver GND LSO VDDSYNC HSB HSGPU HSGPD HSS LSB LSGPU LSGPD LSS Product Description F The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN)
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