PE29102 Datasheet | pSemi

Features - High- and low-side FET drivers - Dead-time control - Fast propagation delay, 9 ns - Tri-state enable mode - Sub-nanosecond rise and fall time - 2A/4A peak source/sink current - Package - flip chip Applications - Class D audio - DC- DCconversions - AC- DC conversions - Wireless charging - Envelope tracking - Li DAR Figure 1 - PE29102 Functional Diagram Product Description The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as enhancement mode gallium nitride (Ga N) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth. High switching speeds result in smaller peripheral ponents and enable innovative designs for applications such as class D audio and wireless charging. The PE29102 is available in a flip chip package. The PE29102 is manufactured on Peregrine’s Ultra CMOS process, a patented advanced form of silicon-oninsulator (SOI) technology, offering the performance of Ga As with the economy and integration of conventional CMOS. ©2018, p Semi Corporation. All rights reserved. - Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Product Specification .psemi. DOC-81227-7 - (11/2018) PE29102 High-speed FET Driver Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this Ultra CMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up...