PE30H15 - N-Channel Enhancement Mode Power MOSFET

semi one

General Description

The PE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =30V,ID =150A RDS(ON).

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PE30H15 n-channel enhancement mode power mosfet by semi one - Datasheet Preview

Datasheet Details

Part number	PE30H15
Manufacturer	semi one
File Size	752.40 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE30H15 Datasheet

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N-Channel Enhancement Mode Power MOSFET Description The PE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =150A RDS(ON) <3.0 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.