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PE3050K - N-Channel Enhancement Mode Power MOSFET

General Description

The PE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number PE3050K
Manufacturer semi one
File Size 427.06 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3050K Datasheet

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Full PDF Text Transcription (Reference)

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PE3050K N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.