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PE3080K - N-Channel Enhancement Mode Power MOSFET

General Description

The PE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =80A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number PE3080K
Manufacturer semi one
File Size 247.89 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3080K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE3080K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =30V,ID =80A RDS(ON) < 7.