PE60R900I
PE60R900I is N-Channel MOSFET manufactured by semi one.
Description
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
- New technology for high voltage device
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS pliant
VDS @Tjmax RDS(ON). ID
650 900
V mΩ A
Application
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
TO-251
PE60R900K
TO-252
PE60R900K
Table 1. Absolute Maximum Ratings (TC=25℃) Parameter
Drain-Source Voltage (VGS=0V） Gate-Source...
