Datasheet4U Logo Datasheet4U.com

PE60R900I - N-Channel MOSFET

General Description

technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Key Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • Small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS @Tjmax RDS(ON). ID 650 900 5 V mΩ A.

📥 Download Datasheet

Datasheet Details

Part number PE60R900I
Manufacturer semi one
File Size 599.96 KB
Description N-Channel MOSFET
Datasheet download datasheet PE60R900I Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE60R900I ,PE60R900K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS @Tjmax RDS(ON).