Datasheet4U Logo Datasheet4U.com

PE6968E - N-Channel Enhancement Mode Power MOSFET

General Description

The PE6 68E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

📥 Download Datasheet

Datasheet Details

Part number PE6968E
Manufacturer semi one
File Size 816.67 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE6968E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE69011 Surface Mount Common Mode Chokes Pulse Engineering
PE6986E N-Channel Power MOSFET ChipSourceTek
PE60 Power Panel 6W Potentiometer Vishay
PE600BA MOSFET UNIKC
PE600SA MOSFET UNIKC

Other Datasheets by semi one

Part Number Description
PE6968 N-Channel Enhancement Mode Power MOSFET
PE6003 N-Channel Enhancement Mode Power MOSFET
PE6004 N-Channel Enhancement Mode Power MOSFET
PE6005 N-Channel Enhancement Mode Power MOSFET
PE6018 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
6 N-Channel Enhancement Mode Power MOSFET Description The PE6 68E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.