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PE6968E Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: semi one

Overview: 6 N-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number PE6968E
Manufacturer semi one
File Size 816.67 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet PE6968E-semione.pdf

General Description

The PE6 68E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

General

Key Features

  • VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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PE6968E Distributor