PED2510L
PED2510L is N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
N-Channel Enhancement Mode Power MOSFET
Description
The PED2510L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
- VDS = 20V,ID =8A RDS(ON) = 14mΩ @ VGS=2.5V RDS(ON) = 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Schematic diagram
S1 S2
S1
D1/D2
S2
G1 G2
Marking and pin Assignment
Application
- Uni-directional load switch
- Bi-directional load switch
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