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PED2510L - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED2510L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = 20V,ID =8A RDS(ON) = 14mΩ @ VGS=2.5V RDS(ON) = 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram S1 S2 S1 D1/D2 S2 G1 G2 Marking and pin Assignment.

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Datasheet preview – PED2510L

Datasheet Details

Part number PED2510L
Manufacturer semi one
File Size 914.54 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED2510L Datasheet
Additional preview pages of the PED2510L datasheet.

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Full PDF Text Transcription

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PED2510L N-Channel Enhancement Mode Power MOSFET Description The PED2510L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =8A RDS(ON) = 14mΩ @ VGS=2.5V RDS(ON) = 10mΩ @ VGS=4.
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