Datasheet Details
| Part number | PED2510L |
|---|---|
| Manufacturer | semi one |
| File Size | 914.54 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 PED2510L Datasheet
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General Description
The PED2510L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
Key Features
- VDS = 20V,ID =8A RDS(ON) = 14mΩ @ VGS=2.5V RDS(ON) = 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
- High power and current handing capability.
- Lead free product is acquired.
- Surface mount package Schematic diagram S1 S2 S1 D1/D2 S2 G1 G2 Marking and pin Assignment.