PED905 Datasheet | semi one

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PED905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switching application and a wide variety of other applications Bottom Drain Contact D1 6D D2 5D GENERAL Features - VDS = -12V,ID = -15A RDS(ON) <15mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-2.5V RDS(ON) <45mΩ @ VGS=-1.8V RDS(ON) < 80mΩ @ VGS=-1.5V - Asvanced trench MOSFET process technology - Ultra low on-resistance with low gate charge - New Thermally Enhanced DFN2X2-6L Package Application - PWM applications - Load switch - battery charge in cellular...