CID10N65D - GaN Enhancement-mode Power Transistor

tokmas

General Description

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 8 mm × 8 mm size

Key Features

Enhancement-mode transistor - normally-OFF power switch.
Ultra-high switching frequency.
No reverse-recovery charge.
Low gate charge, low output charge.
Qualified for industrial.

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CID10N65D gan enhancement-mode power transistor by tokmas - Datasheet Preview

Datasheet Details

Part number	CID10N65D
Manufacturer	tokmas
File Size	2.70 MB
Description	GaN Enhancement-mode Power Transistor
Datasheet	CID10N65D Datasheet

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CID10N65D GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 8 mm × 8 mm size Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency • No reverse-recovery charge • Low gate charge, low output charge • Qualified for industrial applications according to JEDEC Standards • ESD safeguard • RoHS, Pb-free Applications • AC-DC converters • DC-DC converters • Totem pole PFC • Fast battery charging • High-density power conversion • High-efficiency power conversion Table 1 Key Performance Parameters at Tj = 25 oC Parameters VDS, max RDS(on), max QG, typ IDS, Pulse QOSS @ 400 V Qrr Values 650 200 2.