CID10N65D5 - GaN Enhancement-mode Power Transistor

Datasheet Summary

Description

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 5 mm × 6 mm Size

Features

Enhancement-mode transistor - normally-OFF power switch.
Ultra-high switching frequency.
No reverse-recovery charge.
Low gate charge, low output charge.
Qualified for industrial.

tokmas

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Datasheet Details

Part number	CID10N65D5
Manufacturer	tokmas
File Size	5.92 MB
Description	GaN Enhancement-mode Power Transistor
Datasheet	CID10N65D5 Datasheet
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CID10N65D5 GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 5 mm × 6 mm Size Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency • No reverse-recovery charge • Low gate charge, low output charge • Qualified for industrial applications according to JEDEC standards • ESD safeguard • RoHS, Pb-free Applications • AC-DC converters • DC-DC converters • Totem pole PFC • Fast battery charging • High-density power conversion • High-efficiency power conversion Table 1 Key Performance Parameters at Tj = 25 oC Parameters VDS, max RDS(on), max QG, typ ID, Pulse QOSS @ 400 V Qrr Values 650 200 2.

Published: Dec 16, 2024 |