• Part: CID45N65MD
  • Description: 650V GaN Enhancement-mode Power Transistor
  • Category: Transistor
  • Manufacturer: tokmas
  • Size: 1.30 MB
Download CID45N65MD Datasheet PDF
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CID45N65MD
CID45N65MD is 650V GaN Enhancement-mode Power Transistor manufactured by tokmas.
Features - Enhancement-mode transistor - normally-OFF power switch - Ultra-high switching frequency - Capable of reverse conduction, no reverse-recovery charge - Low gate charge, low output charge - Qualified for industrial applications according to JEDEC Standards - ESD safeguard - Ro HS, Pb-free 16 1 Applications - AC-DC converters - DC-DC converters - Totem pole PFC, LLC - Fast battery charging - Industrial, tele, datacenter SMPS - High-density power conversion - High-efficiency power conversion Table 1 Key Performance Parameters at Tj = 25 o C Parameters VDS, max RDS(on), max QG, typ IDS, Pulse QOSS @ 400 V Qrr Values 650 40 13 87 118 0 Units V mΩ n C A n C n C Table 2 Ordering Information Type/Ordering Code TBA Package TOLT Gate Drain Kelvin Source Source 9 1,2,3,4,5,6,7,8 10 11,12,13,14,15,16,17 Marking CCIDID4455NN6655 .tokmas. 1 Maximum ratings at Tj = 25 o C unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact Tokmas sales office. Table 3 Maximum rating Parameters Drain-source voltage Symbols VDS, max Values Min. Typ. Max. - - Units Notes/Test Conditions V VGS = 0 V, ID = 10 μA Drain-source voltage transient 1 VDS,...