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GaN Enhancement-mode Power Transistor
CID10N65F
General description
650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package
Features
• Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency • No reverse-recovery charge • Low gate charge, low output charge • Qualified for industrial applications according to JEDEC standards • ESD safeguard • RoHS, Pb-free
Applications
• AC-DC converters • DC-DC converters • Totem pole PFC • Fast battery charging • High-density power conversion • High-efficiency power conversion
Table 1 Key Performance Parameters at Tj = 25 oC
Parameters VDS, max RDS(on), max QG, typ ID, Pulse QOSS @ 400 V Qrr
Values 650 200 2.
CID10N65F Datasheet
