CID10N65F Datasheet | tokmas

description 650V Ga N-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package Features - Enhancement-mode transistor - normally-OFF power switch - Ultra-high switching frequency - No reverse-recovery charge - Low gate charge, low output charge - Qualified for industrial applications according to JEDEC standards - ESD safeguard - Ro HS, Pb-free Applications - AC-DC converters - DC-DC converters - Totem pole PFC - Fast battery charging - High-density power conversion - High-efficiency power conversion Table 1 Key Performance Parameters at Tj = 25 o C Parameters VDS, max RDS(on), max QG, typ ID, Pulse QOSS @ 400 V Qrr Values 650 200 2.3 18 22 0 Units V mΩ n C A n C n C Gate Source Drain Table 2 Ordering Information Type/Ordering Code Package TO220F-3L Marking 10N65F .tokmas. 1 Maximum ratings at Tj = 25 o C unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact Tokmas sales office. Table 3 Maximum rating Parameters Drain-source voltage Symbols VDS, max Values Min. Typ. Max. -...