CID18N65D5 - GaN Enhancement-mode Power Transistor

Datasheet Summary

Description

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 5 mm × 6 mm Size

Features

Enhancement-mode transistor - normally-OFF power switch.
Ultra-high switching frequency.
No reverse-recovery charge.
Low gate charge, low output charge.
Qualified for industrial.

tokmas

📥 Download Datasheet

Datasheet Details

Part number	CID18N65D5
Manufacturer	tokmas
File Size	5.88 MB
Description	GaN Enhancement-mode Power Transistor
Datasheet	CID18N65D5 Datasheet
Additional preview pages of the CID18N65D5 datasheet.

📁 Similar Datasheet

Other Datasheets by tokmas

CID18N65D - GaN Enhancement-mode Power Transistor
CID10N65D - GaN Enhancement-mode Power Transistor
CID10N65D5 - GaN Enhancement-mode Power Transistor
CID10N65F - GaN Enhancement-mode Power Transistor
CID45N65MD - 650V GaN Enhancement-mode Power Transistor
CID9N65D5 - GaN Enhancement-mode Power Transistor
CID9N65E3 - GaN Enhancement-mode Power Transistor

Full PDF Text Transcription

Click to expand full text

CID18N65D5 GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 5 mm × 6 mm Size Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency • No reverse-recovery charge • Low gate charge, low output charge • Qualified for industrial applications according to JEDEC standards • ESD safeguard • RoHS, Pb-free, REACH-compliant Applications • AC-DC converters • DC-DC converters • Totem pole PFC • Fast battery charging • High-density power conversion • High-efficiency power conversion Table 1 Key Performance Parameters at Tj = 25 oC Parameters VDS, max RDS(on), max QG, typ ID, Pulse QOSS @ 400 V Qrr Values 650 140 3.

Published: Dec 14, 2024 |