CID18N65D5 Datasheet | tokmas

description 650V Ga N-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 5 mm × 6 mm Size Features - Enhancement-mode transistor - normally-OFF power switch - Ultra-high switching frequency - No reverse-recovery charge - Low gate charge, low output charge - Qualified for industrial applications according to JEDEC standards - ESD safeguard - Ro HS, Pb-free, REACH-pliant Applications - AC-DC converters - DC-DC converters - Totem pole PFC - Fast battery charging - High-density power conversion - High-efficiency power conversion Table 1 Key Performance Parameters at Tj = 25 o C Parameters VDS, max RDS(on), max QG, typ ID, Pulse QOSS @ 400 V Qrr Values 650 140 3.3 32 33 0 Units V mΩ n C A n C n C Gate Drain Kelvin Source Source 8 1, 2, 3, 4 7 5, 6, 9 Table 2 Ordering Information Type/Ordering Code Package DFN 5x6, 2500 pcs/reel Marking 18N65 .tokmas. 1 Maximum ratings at Tj = 25 o C unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact Tokmas sales office. Table 3 Maximum rating Parameters Drain-source voltage Symbols VDS, max Values Min. Typ. Max. - - Units Notes/Test Conditions V VGS = 0 V, ID = 10 μA Drain-source voltage transient 1 VDS, transient -...