10N60 Datasheet and Specifications PDF

The 10N60 is a N-Channel Mosfet Transistor.

Key Specifications

PackageTO-220
Mount TypeThrough Hole
Pins3
Height9.15 mm
Length10.66 mm
Width4.83 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part Number10N60 Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 9.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.73Ω(Max) ·Minimum Lot-to-Lot varia.
*Drain Current
*ID= 9.5A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.73Ω(Max)
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Designed for high efficiency switch mode power supply.
*ABSOLUTE MAXI.
Part Number10N60 Datasheet
DescriptionN-Channel Power MOSFET
ManufacturerNell Power Semiconductor
Overview The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage. RDS(ON) = 0.8Ω@VGS = 10V Ultra low gate charge(57nC max.) Low reverse transfer capacitance (CRSS = 18pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (10N60A) GDS TO-220F (10N60AF) D G S TO-263(D2PAK) (10N6.
Part Number10N60 Datasheet
DescriptionN-CHANNEL POWER MOSFET
ManufacturerUnisonic Technologies
Overview The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged av. *Pb-free plating product number: 10N60L * 10A, 600V, RDS(ON) =0.73Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
* SYMBOL 2.Drain 1.Gate 3.Source
* ORDERING INFORMATION Ordering Number Normal Lead .
Part Number10N60 Datasheet
DescriptionN-CHANNEL MOSFET
ManufacturerCHONGQING PINGYANG
Overview 10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220.
* 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A
* Low gate charge
* Low Ciss
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability TO-220AB 10N60 ITO-220AB 10N60F TO-263 10N60B TO-262 10N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gat.

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