| Part Number | 2N3019S Datasheet |
|---|---|
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N3700 2N3700S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collec. dix A for package ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) outline Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc V(BR)CBO 140 Vdc Emitter-Base Breakdown Voltage IE = 100 µAdc V(BR)EBO 7.0 Vdc Collector-Em. |
2N3019S Datasheet and Specifications PDF
The 2N3019S is a LOW POWER NPN SILICON TRANSISTOR.
| Part Number | 2N3019S Datasheet |
|---|---|
| Description | Low Power Transistor |
| Manufacturer | onsemi |
| Overview |
2N3019, 2N3019S, 2N3700
Low Power Transistors
NPN Silicon
Features
• MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characterist.
* MIL *PRF *19500/391 Qualified * Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector *Emitter Voltage VCEO 80 Collector *Base Voltage VCBO 140 Emitter *Base Voltage VEBO 7.0 Collector Current * Continuous IC 1.0 T. |
| Part Number | 2N3019S Datasheet |
|---|---|
| Description | NPN Low Power Silicon Transistor |
| Manufacturer | VPT Components |
| Overview |
2N3019, 2N3019S
NPN Low Power Silicon Transistor
Features
• JAN, JANTX, JANTXV, JANS and JANSR Qualified to MIL-PRF-19500/391
• Lightweight & Low Power • Ideal for Space, Military, & Other High Reliab.
* JAN, JANTX, JANTXV, JANS and JANSR Qualified to MIL-PRF-19500/391 * Lightweight & Low Power * Ideal for Space, Military, & Other High Reliability Applications * Available in TO-5 and TO-39 packages Rev. V2 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Condit. |