| Part Number | 2N5039 |
|---|---|
| Manufacturer | onsemi |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5038/D NPN Silicon Transistors . . . fast switching speeds and high current capacity ideally suit these parts for use in switching reg. ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
2N5039 Datasheet
The 2N5039 is a NPN SILICON POWER TRANSISTORS.
| Part Number | 2N5039 |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | NTE Electronics |
| Overview |
The 2N5038 and 2N5039 are silicon NPN transistors in a TO−3 type package that have fast switching speeds and high current capacity that ideally suit these devices for use in switching regulators, inv.
D High Speed: tf = 0.5s Max. D High Current: IC(max) = 30A D Low Collector *Emitter Saturation Voltage: VCE(sat) = 2.5V max @ IC = 20A Absolute Maximum Ratings: Collector *Base Voltage, VCBO 2N5038 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. |
| Part Number | 2N5039 |
|---|---|
| Description | SILICON NPN POWER TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N5038 and 2N5039 are silicon NPN power transistors designed for power amplifier and power oscillator applications where high current, high voltage, and fast switching speed. VEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) VBE(ON) hFE hFE hFE VCE=140V, VBE=1.5V VCE=110V, VBE=1.5V VCE=100V, VBE=1.5V, TC=150°C VCE=85V, VBE=1.5V, TC=150°C VCE=70V VCE=55V VEB=5.0V VEB=7.0V IC=200mA, VBE=1.5V IC=200mA, RBE≤50Ω IC=200mA IE=50mA IC=12A, IB=1.2A IC=10A, IB=1.0A IC=20A, IB=5.0A. |
| Part Number | 2N5039 |
|---|---|
| Description | NPN HIGH POWER SILICON TRANSISTOR |
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Bas. dc VCE = 55 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 V(BR)CEO V(BR)EBO 2N5038 2N5039 2N5038 2N5039 ICBO 90 75 7.0 1.0 1.0 1.0 1.0 1.0 5.0 5.0 Vdc Vdc µAdc ICEO IEBO µAdc µAdc µAdc 2N5038 2. |