| Part Number | 2N5657 |
|---|---|
| Manufacturer | onsemi |
| Overview |
ON Semiconductor )
Plastic NPN Silicon High-Voltage Power Transistor
. . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage .
Adc Adc Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage 6.0 0.5 1.0 Collector Current * Continuous Peak Base Current 0.25 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 20 0.16 Watts W/_C _C TJ, Tstg *65 to +150 * hFE. |
2N5657 Datasheet
The 2N5657 is a POWER TRANSISTORS.
| Part Number | 2N5657 |
|---|---|
| Description | SILICON NPN TRANSISTOR |
| Manufacturer | STMicroelectronics |
| Overview | The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays. 3 2 1 SOT-32 . t (V BE = -1.5V) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 375 V V CE = 350 V V CE = 250 V V CE = 250 V V EB = 6 V I C = 1 mA I C = 100 mA I C = 0.1 A I C = 0.25 A I C = 0.5 A I C = 0.1 A IC IC IC IC = = = = 50 mA 0.1 A 0.25 A 0.5 A L = 50 mH I B =. |
| Part Number | 2N5657 |
|---|---|
| Description | POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5655/D
Plastic NPN Silicon High-Voltage Power Transistor
2N5655 2N5656 2N5657
0.5 AMPERE POWER TRANSISTORS NPN S.
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* Excellent DC Current Gain * hFE = 30 * 250 @ IC = 100 mAdc * Current *Gain * Bandwidth Product * fT = 10 MHz (Min) @ IC = 50 mAdc MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N5655 250 275 2N5656 300 325 6.0 0.5 1.0 2N5657 350 375 Unit Vdc Vdc Vdc Adc Adc Collector *Emitter. |
| Part Number | 2N5657 |
|---|---|
| Description | (2N5655 - 2N5657) Silicon NPN Power Transistors |
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN 1 2 . duct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5655 VCEO(SUS) Collector-emitter sustaining voltage 2N5656 2N5657 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter . |