2N5681 Datasheet

The 2N5681 is a COMPLEMENTARY SILICON POWER TRANSISTORS.

Datasheet4U Logo
Part Number2N5681
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier and switching. MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VEB=1.5V ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=70V (2N5679, 2N5681) ICEO VCE=80V (2N5680, 2N5682) IEBO VEB=4.0V BVCEO IC=10mA (2N5679, 2N5681) 100 BVCEO IC=10mA (2N5680, 2N5682) 120 VCE(SAT) IC=250mA, IB=25mA VCE(SAT) IC=500.
Part Number2N5681
DescriptionPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
ManufacturerTRANSYS Electronics Limited
Overview SYMBOL 2N5679 2N5681 100 100 2N5680 2N5682 120 120 UNITS V V V A A W mW/deg C W mW/deg C deg C VCEO Collector -Emitter Voltage VCBO Collector -Base Voltage VEBO 4.0 Emitter -Base Voltage IC 1.0 Colle. 0V, IE=0 ICEO VCE=70V, IB=0 <10 VCE=80V, IB=0 ICEX VCE=100V,VEB=1.5V <1.0 VCE=120V,VEB=1.5V TC=150 deg C VCE=100V,VEB=1.5V VCE=120V,VEB=1.5V VEB=4V, IC=0 deg C/W deg C/W 2N5680 2N5682 >120 <1.0 <10 <1.0 UNITS V uA uA uA uA uA uA Emitter-Cut off Current IEBO <1.0 <1.0 <1.0 <1.0 mA mA uA www.Da.
Part Number2N5681
DescriptionNPN POWER TRANSISTOR
ManufacturerMicrosemi
Overview TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/583 Devices 2N5681 2N5682 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS (TA = 25° C unless otherwise noted) 2N5681. wn Voltage IC = 10 mAdc 2N5681 2N5682 Emitter-Base Cutoff Current VEB = 4.0 Vdc Collector-Emitter Cutoff Current VCE = 70 Vdc 2N5681 VCE = 80 Vdc 2N5682 Collector-Emitter Cutoff Current VBE = 1.5 Vdc VCE = 100 Vdc 2N5681 VCE = 120 Vdc 2N5682 Collector-Baser Cutoff Current VCE = 100 Vdc 2N5681 VCE = .
Part Number2N5681
DescriptionNPN SILICON TRANSISTORS
ManufacturerSeme LAB
Overview The 2N5681 and 2N5682 are silicon expitaxial planar NPN transistors in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit. Current Total Dissipation at Tcase £ 25°C Tamb £ 25°C Operating and Storage Temperature Range Junction temperature 2N5681 100V 100V 4V 1A 0.5A 10W 1W 2N5682 120V 120V
*65 to +200°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http:.