The 2N6675 is a NPN POWER SILICON TRANSISTOR.
| Package | TO-3 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 200 °C |
| Min Operating Temp | -65 °C |
| Part Number | 2N6675 Datasheet |
|---|---|
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 2N6675 2N6689 2N6690 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Coll. ristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc VCE = 650 Vdc, VBE = -1.5 Vdc 2N6674, 2N6689 2N6675, 2N6690 2N6674, 2N6689 2N6675, 2N6690 V(BR)CEO 300 400 0.1 0.1 Vdc ICEX mAdc 6 La. |
| Part Number | 2N6675 Datasheet |
|---|---|
| Description | NPN SILICON POWER TRANSISTOR |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM R. ) IC=10A, IB=2.0A hFE VCE=2.0V, IC=10A 8.0 IS/b VCE=30V, IC=5.9A 1.0 IS/b VCE=100V, IC=250mA 1.0 hfe VCE=10V, IC=1.0A, f=5.0MHz 3.0 ft VCE=10V, IC=1.0A, f=5.0MHz 15 Cob VCB=10V, IE=0, f=100kHz 150 MAX 0.1 1.0 2.0 1.0 2.0 5.0 1.5 20 10 50 500 UNITS V V V A A A W °C °C/W UNITS mA mA mA V. |
| Part Number | 2N6675 Datasheet |
|---|---|
| Description | (2N6674 / 2N6675) Silicon Power Transistor |
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6674 . unless otherwise specified PARAMETER 2N6674 VCEO(SUS) Collector-emitter sustaining voltage 2N6675 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6674 ICBO Collector cut-off current 2N6675 IEBO hFE-1 hFE-2 fT Emitte. |
| Part Number | 2N6675 Datasheet |
|---|---|
| Description | NPN High Power Silicon Transistor |
| Manufacturer | MACOM Technology Solutions |
| Overview |
2N6674 & 2N6675
NPN High Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter Off Characte.
* Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537 * TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Test Conditions IC = 200 mAdc 2N6674 2N6675 Symbol Units Min. V(BR)CEO Vdc 300 400 Collector - Emitter Cutof. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 0 | 100+ : 127.93 USD 500+ : 123.01 USD |
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| Component Stockers USA | 6996 | 1+ : 235.66 USD 10+ : 235.66 USD 100+ : 235.66 USD 1000+ : 235.66 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6674 | SavantIC | Silicon Power Transistor |
| 2N6675 | Seme LAB | Bipolar NPN Device |
| 2N6675 | VPT Components | NPN High Power Silicon Transistor |