| Part Number | 2SB1198K Datasheet |
|---|---|
| Manufacturer | ROHM |
| Overview | Transistors Low-frequency Transistor (*80V, *0.5A) 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD. 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm) FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 2. |
2SB1198K Datasheet and Specifications PDF
The 2SB1198K is a Low-frequency Transistor.
Key Specifications
| Package | SMD/SMT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SB1198K Datasheet |
|---|---|
| Description | SILICON PNP TRANSISTOR |
| Manufacturer | LZG |
| Overview | 2SB1198K(3CG1198K) PNP /SILICON PNP TRANSISTOR ：。 Purpose: Medium power amplifier applications. :，, 2SD1782K(3DG1782K)。 Features: High breakdown,low VCE(sat),complements the 2SD1782K(3DG1782K). /A. High breakdown,low VCE(sat),complements the 2SD1782K(3DG1782K). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -80 V VCEO -80 V VEBO -5 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IE. |
| Part Number | 2SB1198K Datasheet |
|---|---|
| Description | PNP Silicon General Purpose Transistor |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Overview | 2SB1198K PNP Silicon Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A L 3 Top View General Purpose Transistor SC-59 Dim A B C D D Min 2.70 1.30 1.00. 2 B 1 G H C J K G Power dissipation : 0.2 W PCM Collector current ICM : -0.5 A * Collector-base voltage V V(BR)CBO : -80 Operating and storage junction temperature range TJ Tstg: -55 to +150 J K L S H 3 2 1 All Dimension in mm COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS Parame. |
| Part Number | 2SB1198K Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | DXC |
| Overview | 2SB1198K SOT-23-3L Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR Features Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K MA. Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curr. |