| Part Number | 2SD2012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device perf. d SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 60V ; I. |
2SD2012 Datasheet
The 2SD2012 is a NPN Transistor.
| Part Number | 2SD2012 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • H. olute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-01 Elect. |
| Part Number | 2SD2012 |
|---|---|
| Description | NPN Silicon Power Transistor |
| Manufacturer | STMicroelectronics |
| Overview | The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. 3 2 1 TO-220F INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIM. CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) IEBO Emitter Cut-off Current (IC = 0) V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0) VCE(sat)∗ Collector-Emitter Saturation Voltage VCB = 60 V VEB = . |
| Part Number | 2SD2012 |
|---|---|
| Description | NPN Silicon Power Transistors |
| Manufacturer | Micro Commercial Components |
| Overview |
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2SD2012
Features
• High DC Current Gain: hFE(.
* High DC Current Gain: hFE(1) =100 (Min.) * Low Saturation Voltage: VCE(sat)=1.0V (Max.) * High Power Dissipation: PC=25W (TC=25OC) * Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) * Epoxy meets UL 94 V-0 flammability rating *MaMxoimisuurem. |