| Part Number | 2SD882 |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772.
1 2 3
SOT-32 (TO-126)
Figure 1. Internal sch.
* High current * Low saturation voltage * Complement to 2SB772 Applications * Voltage regulation * Relay driver * Generic switch * Audio power amplifier * DC-DC converter Description The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. . |
2SD882 Datasheet
The 2SD882 is a NPN MEDIUM POWER TRANSISTOR.
| Part Number | 2SD882 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A ·Good Linearity of hFE ·Complement to Type 2SB772 ·Minimum Lot-to-Lot variations for robust device . d SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2.0A; IB= 0.2A ICBO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA ; VCE= 2V . |
| Part Number | 2SD882 |
|---|---|
| Description | NPN Silicon Power Transistor |
| Manufacturer | NEC |
| Overview |
The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.
FEATURES
• Low saturation voltage VCE(sat) = 0.5 V MAX.
* Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = *2 A, IB = 0.2 A) * Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) * Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 3.8 . |
| Part Number | 2SD882 |
|---|---|
| Description | NPN Transistors |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type NPN Transistors 2SD882 Transistors Features Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) 1.70 0.1 0.42 0.1 0.46 0.1 Absolute Maximum Ratings Ta = 25 Para. Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) 1.70 0.1 0.42 0.1 0.46 0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current to Continuous Collector Dissipation Junction Temperat. |