2SJ387S Datasheet and Specifications PDF

2SJ387S-VB 2SJ387S-VB Datasheet P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 0.016 at VGS = - 4.5 V 0.025 at VGS = - 2.5 V ID (A)d - 40 - 35 Qg (Typ.) .

* Halogen-free According to IEC 61249-2-21 Definition
* Trench Power MOSFET
* 100 % Rg Tested APPLICATIONS
* Load Switch
* Battery Switch GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC.

SMDTTyyppee MOSFIECT Silicon P-Channel MOSFET 2SJ387S Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC co.

Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 .

2SJ387(L), 2SJ387(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suita.

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* Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 2 3 3 2SJ387(L), 2SJ387(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to.

High speed power switching REJ03G0862-0200 (Previous: ADE-208-1196) Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • S.

* Low on-resistance
* Low drive current
* 2.5 V Gate drive device can be driven from 3 V Source
* Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 123 123 .