| Part Number | 2SK3113 Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type MOS Field Effect Transistor 2SK3113 MOSFICET Features Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A) Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 . Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A) Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) Gate voltage rating 30 V Avalanche capability ratings +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.. |
2SK3113 Datasheet and Specifications PDF
The 2SK3113 is a MOS Field Effect Transistor.
Key Specifications
| Package | TO-251 |
|---|---|
| Mount Type | Through Hole |
| Pins | 0 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SK3113 Datasheet |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Manufacturer | Renesas |
| Overview |
The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.
.
a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3113
TO-251 (MP-3)
2SK3113-Z
TO-252 (MP-3Z)
FEATURES
* Low on-state resistance RDS(on) = 4.4 Ω MAX. (VG. |
| Part Number | 2SK3113 Datasheet |
|---|---|
| Description | SWITCHING N-CHANNEL POWER MOSFET |
| Manufacturer | NEC |
| Overview |
The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.
.
a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3113 2SK3113-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
FEATURES
* Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10. |