Datasheet4U Logo Datasheet4U.com

2SK3113 - N-CHANNEL POWER MOSFET

General Description

The 2SK3113 is N-channel DMOS FET device that

Key Features

  • a low gate charge and excellent switching characteristic, and designed for high voltage.

📥 Download Datasheet

Datasheet Details

Part number 2SK3113
Manufacturer Renesas
File Size 180.52 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK3113 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3113 SWITCHING N-CHANNEL POWER MOSFET NEC
2SK3113 MOS Field Effect Transistor Kexin
2SK3113B MOS FIELD EFFECT TRANSISTOR NEC
2SK311 N-Channel MOSFET Transistor Inchange Semiconductor
2SK311 (2SK310 / 2SK311) SILICON N-CHANNEL MOS FET Hitachi Semiconductor

Other Datasheets by Renesas

Part Number Description
2SK3115B N-CHANNEL POWER MOSFET
2SK3107C N-CHANNEL MOSFET
2SK3136 Silicon N-Channel MOSFET
2SK3141 Silicon N-Channel MOS FET
2SK3147 Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3113 TO-251 (MP-3) 2SK3113-Z TO-252 (MP-3Z) FEATURES • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.